FQPF1N60
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Fairchild Semiconductor FQPF1N60

Manufacturer No:
FQPF1N60
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQPF1N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 900MA TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.5Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):21W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number FQPF1N60 FQPF3N60   FQPF4N60   FQPF6N60   FQPF2N60   FQPF5N60   FQPF1N60T   FQPF12N60   FQPF1N50  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 900mA (Tc) 2A (Tc) 2.6A (Tc) 3.6A (Tc) 1.6A (Tc) 2.8A (Tc) 900mA (Tc) 5.8A (Tc) 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 11.5Ohm @ 450mA, 10V 3.6Ohm @ 1A, 10V 2.2Ohm @ 1.3A, 10V 1.5Ohm @ 1.8A, 10V 4.7Ohm @ 800mA, 10V 2Ohm @ 1.4A, 10V 11.5Ohm @ 450mA, 10V 700mOhm @ 2.9A, 10V 9Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 13 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 11 nC @ 10 V 20 nC @ 10 V 6 nC @ 10 V 54 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 450 pF @ 25 V 670 pF @ 25 V 1000 pF @ 25 V 350 pF @ 25 V 730 pF @ 25 V 150 pF @ 25 V 1900 pF @ 25 V 150 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 21W (Tc) 34W (Tc) 36W (Tc) 44W (Tc) 28W (Tc) 40W (Tc) 21W (Tc) 55W (Tc) 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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