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Part Number | FQPF19N20 | FQPF19N20T | FQPF19N20C | FQPF10N20 | FQPF19N10 |
---|---|---|---|---|---|
Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
Product Status | Active | Active | Active | Obsolete | Obsolete |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | 100 V | 200 V | 200 V | 100 V |
Current - Continuous Drain (Id) @ 25°C | 11.8A (Tc) | 11.8A (Tc) | 19A (Tc) | 6.8A (Tc) | 13.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 150mOhm @ 5.9A, 10V | 150mOhm @ 5.9A, 10V | 170mOhm @ 9.5A, 10V | 360mOhm @ 3.4A, 10V | 100mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 40 nC @ 10 V | 53 nC @ 10 V | 18 nC @ 10 V | 25 nC @ 10 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V | 1600 pF @ 25 V | 1080 pF @ 25 V | 670 pF @ 25 V | 780 pF @ 25 V |
FET Feature | - | - | - | - | - |
Power Dissipation (Max) | 50W (Tc) | 50W (Tc) | 43W (Tc) | 40W (Tc) | 38W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220F-3 | TO-220F | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |