FQPF10N20
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Fairchild Semiconductor FQPF10N20

Manufacturer No:
FQPF10N20
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQPF10N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 6.8A TO220F
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number FQPF10N20 FQPF10N20C   FQPF19N20  
Manufacturer Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Last Time Buy Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) 9.5A (Tc) 11.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3.4A, 10V 360mOhm @ 4.75A, 10V 150mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 26 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 510 pF @ 25 V 1600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 38W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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