FQP7N80
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Fairchild Semiconductor FQP7N80

Manufacturer No:
FQP7N80
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQP7N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6.6A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Part Number FQP7N80 FQP7N80C   FQP2N80   FQP3N80   FQP4N80   FQP5N80   FQP6N80   FQP7N10   FQP7N20   FQP7N40   FQP7N60  
Manufacturer Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Active Obsolete Last Time Buy Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V 800 V 100 V 200 V 400 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 6.6A (Tc) 2.4A (Tc) 3A (Tc) 3.9A (Tc) 4.8A (Tc) 5.8A (Tc) 7.3A (Tc) 6.6A (Tc) 7A (Tc) 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.3A, 10V 1.9Ohm @ 3.3A, 10V 6.3Ohm @ 1.2A, 10V 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 1.95Ohm @ 2.9A, 10V 350mOhm @ 3.65A, 10V 690mOhm @ 3.3A, 10V 800mOhm @ 3.5A, 10V 1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 22 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 1680 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 250 pF @ 25 V 400 pF @ 25 V 780 pF @ 25 V 1430 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 167W (Tc) 167W (Tc) 85W (Tc) 107W (Tc) 130W (Tc) 140W (Tc) 158W (Tc) 40W (Tc) 63W (Tc) 98W (Tc) 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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