FQP6N80
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Fairchild Semiconductor FQP6N80

Manufacturer No:
FQP6N80
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQP6N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 5.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N80 FQP7N80   FQP6N80C   FQP6N90   FQP2N80   FQP3N80   FQP4N80   FQP5N80   FQP6N50   FQP6N60   FQP6N70  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Active Obsolete Active Obsolete Last Time Buy Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 6.6A (Tc) 5.5A (Tc) 5.8A (Tc) 2.4A (Tc) 3A (Tc) 3.9A (Tc) 4.8A (Tc) 5.5A (Tc) 6.2A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V 1.5Ohm @ 3.3A, 10V 2.5Ohm @ 2.75A, 10V 1.9Ohm @ 2.9A, 10V 6.3Ohm @ 1.2A, 10V 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 52 nC @ 10 V 30 nC @ 10 V 52 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 1850 pF @ 25 V 1310 pF @ 25 V 1880 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 158W (Tc) 167W (Tc) 158W (Tc) 167W (Tc) 85W (Tc) 107W (Tc) 130W (Tc) 140W (Tc) 98W (Tc) 130W (Tc) 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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