FQP6N50C
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Fairchild Semiconductor FQP6N50C

Manufacturer No:
FQP6N50C
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQP6N50C Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 5.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):98W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N50C FQP6N80C   FQP6N60C   FQP9N50C   FQP6N90C   FQP3N50C   FQP5N50C   FQP6N40C   FQP6N50  
Manufacturer Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Active Obsolete Obsolete Obsolete Active Obsolete Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 800 V 600 V 500 V 900 V 500 V 500 V 400 V 500 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc) 5.5A (Tc) 9A (Tc) 6A (Tc) 3A (Tc) 5A (Tc) 6A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 2.5Ohm @ 2.75A, 10V 2Ohm @ 2.75A, 10V 800mOhm @ 4.5A, 10V 2.3Ohm @ 3A, 10V 2.5Ohm @ 1.5A, 10V 1.4Ohm @ 2.5A, 10V 1Ohm @ 3A, 10V 1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 30 nC @ 10 V 20 nC @ 10 V 35 nC @ 10 V 40 nC @ 10 V 13 nC @ 10 V 24 nC @ 10 V 20 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 1310 pF @ 25 V 810 pF @ 25 V 1030 pF @ 25 V 1770 pF @ 25 V 365 pF @ 25 V 625 pF @ 25 V 625 pF @ 25 V 790 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 98W (Tc) 158W (Tc) 125W (Tc) 135W (Tc) 167W (Tc) 62W (Tc) 73W (Tc) 73W (Tc) 98W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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