FQP6N50
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Fairchild Semiconductor FQP6N50

Manufacturer No:
FQP6N50
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQP6N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 5.5A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):98W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP6N50 FQP6N50C   FQP9N50   FQP6N80   FQP6N70   FQP6N60   FQP6N90   FQP1N50   FQP2N50  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 800 V 700 V 600 V 900 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5.5A (Tc) 9A (Tc) 5.8A (Tc) 6.2A (Tc) 6.2A (Tc) 5.8A (Tc) 1.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.8A, 10V 1.2Ohm @ 2.8A, 10V 730mOhm @ 4.5A, 10V 1.95Ohm @ 2.9A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V 1.9Ohm @ 2.9A, 10V 9Ohm @ 700mA, 10V 5.3Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 25 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V 40 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V 700 pF @ 25 V 1450 pF @ 25 V 1500 pF @ 25 V 1400 pF @ 25 V 1000 pF @ 25 V 1880 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 98W (Tc) 98W (Tc) 147W (Tc) 158W (Tc) 142W (Tc) 130W (Tc) 167W (Tc) 40W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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