FQP2N60
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Fairchild Semiconductor FQP2N60

Manufacturer No:
FQP2N60
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQP2N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 2.4A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):64W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP2N60 FQP3N60   FQP2N80   FQP2N90   FQP2N60C   FQP4N60   FQP6N60   FQP7N60   FQP12N60   FQP1N60   FQP2N30   FQP2N40   FQP2N50  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Active Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 900 V 600 V 600 V 600 V 600 V 600 V 600 V 300 V 400 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 3A (Tc) 2.4A (Tc) 2.2A (Tc) 2A (Tc) 4.4A (Tc) 6.2A (Tc) 7.4A (Tc) 10.5A (Tc) 1.2A (Tc) 2.1A (Tc) 1.8A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 1.2A, 10V 3.6Ohm @ 1.5A, 10V 6.3Ohm @ 1.2A, 10V 7.2Ohm @ 1.1A, 10V 4.7Ohm @ 1A, 10V 2.2Ohm @ 2.2A, 10V 1.5Ohm @ 3.1A, 10V 1Ohm @ 3.7A, 10V 700mOhm @ 5.3A, 10V 11.5Ohm @ 600mA, 10V 3.7Ohm @ 1.05A, 10V 5.8Ohm @ 900mA, 10V 5.3Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 13 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 12 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 38 nC @ 10 V 54 nC @ 10 V 6 nC @ 10 V 5 nC @ 10 V 5.5 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 450 pF @ 25 V 550 pF @ 25 V 500 pF @ 25 V 235 pF @ 25 V 670 pF @ 25 V 1000 pF @ 25 V 1430 pF @ 25 V 1900 pF @ 25 V 150 pF @ 25 V 130 pF @ 25 V 150 pF @ 25 V 230 pF @ 25 V
FET Feature - - - - - - - - - - - - -
Power Dissipation (Max) 64W (Tc) 75W (Tc) 85W (Tc) 85W (Tc) 54W (Tc) 106W (Tc) 130W (Tc) 142W (Tc) 180W (Tc) 40W (Tc) 40W (Tc) 40W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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