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| Part Number | FQNL2N50BBU | FQNL1N50BBU |
|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tc) | 270mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 175mA, 10V | 9Ohm @ 135mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V | 5.5 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V | 150 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.5W (Tc) | 1.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 Long Body (Formed Leads) |
