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| Part Number | FQI8N60CTU | FQI5N60CTU | FQI6N60CTU |
|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) | 4.5A (Tc) | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.75A, 10V | 2.5Ohm @ 2.25A, 10V | 2Ohm @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 19 nC @ 10 V | 20 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 25 V | 670 pF @ 25 V | 810 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) | 3.13W (Ta), 100W (Tc) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
