FQI7N80TU
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Fairchild Semiconductor FQI7N80TU

Manufacturer No:
FQI7N80TU
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQI7N80TU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 6.6A I2PAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number FQI7N80TU FQI2N80TU   FQI3N80TU   FQI4N80TU   FQI5N80TU   FQI7N10TU   FQI7N60TU  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 100 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 2.4A (Tc) 3A (Tc) 3.9A (Tc) 4.8A (Tc) 7.3A (Tc) 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.3A, 10V 6.3Ohm @ 900mA, 10V 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 350mOhm @ 3.65A, 10V 1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 7.5 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 250 pF @ 25 V 1430 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 107W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.75W (Ta), 40W (Tc) 3.13W (Ta), 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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