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Part Number | FQI7N10LTU | FQI7N10TU |
---|---|---|
Manufacturer | Fairchild Semiconductor | onsemi |
Product Status | Obsolete | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | 100 V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 10V |
Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V | 350mOhm @ 3.65A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V | 7.5 nC @ 10 V |
Vgs (Max) | ±20V | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | 250 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) | 3.75W (Ta), 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |