FQI3N80TU
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Fairchild Semiconductor FQI3N80TU

Manufacturer No:
FQI3N80TU
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQI3N80TU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number FQI3N80TU FQI4N80TU   FQI7N80TU   FQI5N80TU   FQI3N90TU   FQI2N80TU   FQI3N30TU   FQI3N40TU  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 300 V 400 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3.9A (Tc) 6.6A (Tc) 4.8A (Tc) 3.6A (Tc) 2.4A (Tc) 3.2A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 1.5Ohm @ 3.3A, 10V 2.6Ohm @ 2.4A, 10V 4.25Ohm @ 1.8A, 10V 6.3Ohm @ 900mA, 10V 2.2Ohm @ 1.6A, 10V 3.4Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 33 nC @ 10 V 26 nC @ 10 V 15 nC @ 10 V 7 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V 880 pF @ 25 V 1850 pF @ 25 V 1250 pF @ 25 V 910 pF @ 25 V 550 pF @ 25 V 230 pF @ 25 V 230 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 107W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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