FQI2N80TU
  • Share:

Fairchild Semiconductor FQI2N80TU

Manufacturer No:
FQI2N80TU
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQI2N80TU Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 2.4A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
501

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQI2N80TU FQI2N90TU   FQI4N80TU   FQI7N80TU   FQI5N80TU   FQI3N80TU   FQI2N30TU  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 900 V 800 V 800 V 800 V 800 V 300 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 2.2A (Tc) 3.9A (Tc) 6.6A (Tc) 4.8A (Tc) 3A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V 7.2Ohm @ 1.1A, 10V 3.6Ohm @ 1.95A, 10V 1.5Ohm @ 3.3A, 10V 2.6Ohm @ 2.4A, 10V 5Ohm @ 1.5A, 10V 3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 33 nC @ 10 V 19 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 500 pF @ 25 V 880 pF @ 25 V 1850 pF @ 25 V 1250 pF @ 25 V 690 pF @ 25 V 130 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 107W (Tc) 3.13W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I2PAK I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

PSMN3R2-40YLDX
PSMN3R2-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
IRFB11N50APBF
IRFB11N50APBF
Vishay Siliconix
MOSFET N-CH 500V 11A TO220AB
2N7002BKS/DG/B2115
2N7002BKS/DG/B2115
Nexperia USA Inc.
N-CHANNEL SMALL SIGNAL MOSFET
RM8N700LD
RM8N700LD
Rectron USA
MOSFET N-CHANNEL 700V 8A TO252-2
DMN61D9UW-13
DMN61D9UW-13
Diodes Incorporated
MOSFET N-CH 60V 340MA SOT323
DMP3097L-13
DMP3097L-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
TK40S06N1L,LQ
TK40S06N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 40A DPAK
IRF9Z14
IRF9Z14
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO220AB
NTP13N10
NTP13N10
onsemi
MOSFET N-CH 100V 13A TO220AB
IRF6648TR1
IRF6648TR1
Infineon Technologies
MOSFET N-CH 60V 86A DIRECTFET MN
IRFR3911TRLPBF
IRFR3911TRLPBF
Infineon Technologies
MOSFET N-CH 100V 14A DPAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

3N258
3N258
Fairchild Semiconductor
BRIDGE RECTIFIER DIODE
KSR1102MTF
KSR1102MTF
Fairchild Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR
FDS8934A
FDS8934A
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
FDG329N
FDG329N
Fairchild Semiconductor
MOSFET N-CH 20V 1.5A SC88
FQA34N25
FQA34N25
Fairchild Semiconductor
MOSFET N-CH 250V 34A TO3P
LM2902AMX
LM2902AMX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER, 4 FUNC, 1
DM74ALS240AN
DM74ALS240AN
Fairchild Semiconductor
IC BUFFER INVERT 5.5V 20DIP
DM74S175N
DM74S175N
Fairchild Semiconductor
IC FF D-TYPE SNGL 4BIT 16DIP
74LVQ02SCX
74LVQ02SCX
Fairchild Semiconductor
IC GATE NOR 4CH 2-INP 14SOIC
74VHC32N
74VHC32N
Fairchild Semiconductor
IC GATE OR 4CH 2-INP 14DIP
74ACT373MTCX
74ACT373MTCX
Fairchild Semiconductor
BUS DRIVER
ILC5062AM30X
ILC5062AM30X
Fairchild Semiconductor
IC SUPERVISOR PWR SUP SUPPORT