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| Part Number | FQI12N60CTU | FQI12N60TU | FQI10N60CTU |
|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | 10.5A (Tc) | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V | 700mOhm @ 5.3A, 10V | 730mOhm @ 4.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 54 nC @ 10 V | 57 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V | 1900 pF @ 25 V | 2040 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 225W (Tc) | 3.13W (Ta), 180W (Tc) | 3.13W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
