FQD5N30TM
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Fairchild Semiconductor FQD5N30TM

Manufacturer No:
FQD5N30TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQD5N30TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 4.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD5N30TM FQD5N40TM   FQD5N50TM   FQD7N30TM   FQD2N30TM   FQD3N30TM   FQD5N30TF  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 400 V 500 V 300 V 300 V 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) 3.4A (Tc) 3.5A (Tc) 5.5A (Tc) 1.7A (Tc) 2.4A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V 1.6Ohm @ 1.7A, 10V 1.8Ohm @ 1.75A, 10V 700mOhm @ 2.75A, 10V 3.7Ohm @ 850mA, 10V 2.2Ohm @ 1.2A, 10V 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V 5 nC @ 10 V 7 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 610 pF @ 25 V 130 pF @ 25 V 230 pF @ 25 V 430 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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