FQD3N60CTM
  • Share:

Fairchild Semiconductor FQD3N60CTM

Manufacturer No:
FQD3N60CTM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQD3N60CTM Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
321

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD3N60CTM FQD6N60CTM   FQD5N60CTM   FQD3N60TM   FQD1N60CTM   FQD2N60CTM   FQD3N50CTM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Active Obsolete Last Time Buy Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 4A (Tc) 2.8A (Tc) 2.4A (Tc) 1A (Tc) 1.9A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.2A, 10V 2Ohm @ 2A, 10V 2.5Ohm @ 1.4A, 10V 3.6Ohm @ 1.2A, 10V 11.5Ohm @ 500mA, 10V 4.7Ohm @ 950mA, 10V 2.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 20 nC @ 10 V 19 nC @ 10 V 13 nC @ 10 V 6.2 nC @ 10 V 12 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 565 pF @ 25 V 810 pF @ 25 V 670 pF @ 25 V 450 pF @ 25 V 170 pF @ 25 V 235 pF @ 25 V 365 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 50W (Tc) 80W (Tc) 2.5W (Ta), 49W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 44W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252AA TO-252AA TO-252, (D-Pak) TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

EPC2029
EPC2029
EPC
GANFET N-CH 80V 48A DIE
IPD135N03LGATMA1
IPD135N03LGATMA1
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
PJS6421-AU_S1_000A1
PJS6421-AU_S1_000A1
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
IRFIZ44NPBF
IRFIZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 31A TO220AB FP
TK16N60W,S1VF
TK16N60W,S1VF
Toshiba Semiconductor and Storage
MOSFET N CH 600V 15.8A TO247
IPB26CN10N
IPB26CN10N
Infineon Technologies
N-CHANNEL POWER MOSFET
DMTH4014LPSWQ-13
DMTH4014LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
PSMN5R0-100ES,127
PSMN5R0-100ES,127
Nexperia USA Inc.
MOSFET N-CH 100V 120A I2PAK
NTHD5904NT3G
NTHD5904NT3G
onsemi
MOSFET N-CH 20V 2.5A CHIPFET
TPCP8005-H(TE85L,F
TPCP8005-H(TE85L,F
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 11A PS-8
IPP80N04S2L03AKSA1
IPP80N04S2L03AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
FL5252050R
FL5252050R
Panasonic Electronic Components
MOSFET P-CH 20V 2.1A MINI5-G3-B

Related Product By Brand

FLZ9V1C
FLZ9V1C
Fairchild Semiconductor
DIODE ZENER 9.1V 500MW SOD80
BC856CMTF
BC856CMTF
Fairchild Semiconductor
TRANS PNP 65V 0.1A SOT23-3
TN2219A
TN2219A
Fairchild Semiconductor
TRANS NPN 40V 1A TO226-3
IRF830B
IRF830B
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FQI13N06LTU
FQI13N06LTU
Fairchild Semiconductor
MOSFET N-CH 60V 13.6A I2PAK
FDD6296
FDD6296
Fairchild Semiconductor
MOSFET N-CH 30V 15A/50A DPAK
TMC22053KHC
TMC22053KHC
Fairchild Semiconductor
COLOR SIGNAL DECODER
MM74HCT245SJ
MM74HCT245SJ
Fairchild Semiconductor
IC TXRX NON-INVERT 5.5V 20SOP
74VHCT573AMX
74VHCT573AMX
Fairchild Semiconductor
BUS DRIVER, AHCT/VHCT SERIES, 1-
DM74LS299WMX
DM74LS299WMX
Fairchild Semiconductor
PARALLEL IN PARALLEL OUT
FM93C66LMT8X
FM93C66LMT8X
Fairchild Semiconductor
EEPROM, 256X16, SERIAL, CMOS
MOC3021SVM
MOC3021SVM
Fairchild Semiconductor
TRIAC OUTPUT OPTOCOUPLER, 5300V