FQD2N60CTM
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Fairchild Semiconductor FQD2N60CTM

Manufacturer No:
FQD2N60CTM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQD2N60CTM Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD2N60CTM FQD6N60CTM   FQD5N60CTM   FQD3N60CTM   FQD2N60TM   FQD1N60CTM   FQD2N60CTF  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Active Active Obsolete Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 4A (Tc) 2.8A (Tc) 2.4A (Tc) 2A (Tc) 1A (Tc) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V 2Ohm @ 2A, 10V 2.5Ohm @ 1.4A, 10V 3.4Ohm @ 1.2A, 10V 4.7Ohm @ 1A, 10V 11.5Ohm @ 500mA, 10V 4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 20 nC @ 10 V 19 nC @ 10 V 14 nC @ 10 V 11 nC @ 10 V 6.2 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V 810 pF @ 25 V 670 pF @ 25 V 565 pF @ 25 V 350 pF @ 25 V 170 pF @ 25 V 235 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) 80W (Tc) 2.5W (Ta), 49W (Tc) 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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