FQD1N50TM
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Fairchild Semiconductor FQD1N50TM

Manufacturer No:
FQD1N50TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQD1N50TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 1.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 550mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD1N50TM FQD1N60TM   FQD4N50TM   FQD5N50TM   FQD1N80TM   FQD1P50TM   FQD2N50TM   FQD1N50TF  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V 800 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc) 1A (Tc) 2.6A (Tc) 3.5A (Tc) 1A (Tc) 1.2A (Tc) 1.6A (Tc) 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 550mA, 10V 11.5Ohm @ 500mA, 10V 2.7Ohm @ 1.3A, 10V 1.8Ohm @ 1.75A, 10V 20Ohm @ 500mA, 10V 10.5Ohm @ 600mA, 10V 5.3Ohm @ 800mA, 10V 9Ohm @ 550mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V 6 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 7.2 nC @ 10 V 14 nC @ 10 V 8 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 150 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 195 pF @ 25 V 350 pF @ 25 V 230 pF @ 25 V 150 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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