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| Part Number | FQB9N50TM | FQB4N50TM | FQB5N50TM | FQB6N50TM | FQB9N50CTM |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor | onsemi |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | 3.4A (Tc) | 4.5A (Tc) | 5.5A (Tc) | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.5A, 10V | 2.7Ohm @ 1.7A, 10V | 1.8Ohm @ 2.25A, 10V | 1.3Ohm @ 2.8A, 10V | 800mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 13 nC @ 10 V | 17 nC @ 10 V | 22 nC @ 10 V | 35 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V | 460 pF @ 25 V | 610 pF @ 25 V | 790 pF @ 25 V | 1030 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) | 3.13W (Ta), 70W (Tc) | 3.13W (Ta), 85W (Tc) | 3.13W (Ta), 130W (Tc) | 135W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
