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| Part Number | FQB8N25TM | FQB9N25TM | FQB3N25TM | FQB4N25TM | FQB6N25TM |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V | 250 V | 250 V | 250 V | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | 9.4A (Tc) | 2.8A (Tc) | 3.6A (Tc) | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V | 420mOhm @ 4.7A, 10V | 2.2Ohm @ 1.4A, 10V | 1.75Ohm @ 1.8A, 10V | 1Ohm @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 20 nC @ 10 V | 5.2 nC @ 10 V | 5.6 nC @ 10 V | 8.5 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V | 700 pF @ 25 V | 170 pF @ 25 V | 200 pF @ 25 V | 300 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 87W (Tc) | 3.13W (Ta), 90W (Tc) | 3.13W (Ta), 45W (Tc) | 3.13W (Ta), 52W (Tc) | 3.13W (Ta), 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
