FQB7N80TM
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Fairchild Semiconductor FQB7N80TM

Manufacturer No:
FQB7N80TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB7N80TM Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB7N80TM FQB2N80TM   FQB3N80TM   FQB4N80TM   FQB5N80TM   FQB6N80TM   FQB7N10TM   FQB7N20TM   FQB7N30TM   FQB7N60TM  
Manufacturer Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V 100 V 200 V 300 V 600 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 2.4A (Tc) 3A (Tc) 3.9A (Tc) 4.8A (Tc) 5.8A (Tc) 7.3A (Tc) 6.6A (Tc) 7A (Tc) 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.3A, 10V 6.3Ohm @ 900mA, 10V 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 1.95Ohm @ 2.9A, 10V 350mOhm @ 3.65A, 10V 690mOhm @ 3.3A, 10V 700mOhm @ 3.5A, 10V 1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 31 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 17 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 1500 pF @ 25 V 250 pF @ 25 V 400 pF @ 25 V 610 pF @ 25 V 1430 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 85W (Tc) - 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 158W (Tc) 3.75W (Ta), 40W (Tc) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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