FQB6N90TM
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Fairchild Semiconductor FQB6N90TM

Manufacturer No:
FQB6N90TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB6N90TM Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB6N90TM FQB2N90TM   FQB3N90TM   FQB4N90TM   FQB5N90TM   FQB6N50TM   FQB6N60TM   FQB6N70TM   FQB6N80TM  
Manufacturer Fairchild Semiconductor onsemi onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Active Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 500 V 600 V 700 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 2.2A (Tc) 3.6A (Tc) 4.2A (Tc) 5.4A (Tc) 5.5A (Tc) 6.2A (Tc) 6.2A (Tc) 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 2.9A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 2.3Ohm @ 2.7A, 10V 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 1550 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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