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| Part Number | FQB6N70TM | FQB6N90TM | FQB6N80TM | FQB6N50TM | FQB6N60TM |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Active | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V | 900 V | 800 V | 500 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) | 5.8A (Tc) | 5.8A (Tc) | 5.5A (Tc) | 6.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.1A, 10V | 1.9Ohm @ 2.9A, 10V | 1.95Ohm @ 2.9A, 10V | 1.3Ohm @ 2.8A, 10V | 1.5Ohm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 52 nC @ 10 V | 31 nC @ 10 V | 22 nC @ 10 V | 25 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | 1880 pF @ 25 V | 1500 pF @ 25 V | 790 pF @ 25 V | 1000 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) | 3.13W (Ta), 167W (Tc) | 3.13W (Ta), 158W (Tc) | 3.13W (Ta), 130W (Tc) | 3.13W (Ta), 130W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
