FQB6N50TM
  • Share:

Fairchild Semiconductor FQB6N50TM

Manufacturer No:
FQB6N50TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB6N50TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 5.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.71
1,023

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB6N50TM FQB6N60TM   FQB6N90TM   FQB6N70TM   FQB9N50TM   FQB6N80TM   FQB2N50TM   FQB4N50TM   FQB5N50TM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 900 V 700 V 500 V 800 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 6.2A (Tc) 5.8A (Tc) 6.2A (Tc) 9A (Tc) 5.8A (Tc) 2.1A (Tc) 3.4A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.9Ohm @ 2.9A, 10V 1.5Ohm @ 3.1A, 10V 730mOhm @ 4.5A, 10V 1.95Ohm @ 2.9A, 10V 5.3Ohm @ 1.05A, 10V 2.7Ohm @ 1.7A, 10V 1.8Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 40 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V 8 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V 1000 pF @ 25 V 1880 pF @ 25 V 1400 pF @ 25 V 1450 pF @ 25 V 1500 pF @ 25 V 230 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 147W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDS6670A
FDS6670A
onsemi
MOSFET N-CH 30V 13A 8SOIC
TP65H070LSG-TR
TP65H070LSG-TR
Transphorm
GANFET N-CH 650V 25A PQFN88
BUK964R2-80E,118
BUK964R2-80E,118
Nexperia USA Inc.
MOSFET N-CH 80V 120A D2PAK
SQ2318BES-T1_GE3
SQ2318BES-T1_GE3
Vishay Siliconix
MOSFET N-CH 40V 8A SOT23-3
IPW65R190CFDFKSA2
IPW65R190CFDFKSA2
Infineon Technologies
MOSFET N-CH 650V 17.5A TO247-3
IRFR230BTM_AM002
IRFR230BTM_AM002
onsemi
MOSFET N-CH 200V 7.5A DPAK
IXFT24N50Q
IXFT24N50Q
IXYS
MOSFET N-CH 500V 24A TO268
IRLL2703TRPBF
IRLL2703TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.9A SOT223
IXFA7N60P3
IXFA7N60P3
IXYS
MOSFET N-CH 600V 7A TO263
MCH6342-TL-W
MCH6342-TL-W
onsemi
MOSFET P-CH 30V 4.5A MCPH6
STD20P3H6AG
STD20P3H6AG
STMicroelectronics
MOSFET P-CH 30V 20A DPAK
RSR020P03TL
RSR020P03TL
Rohm Semiconductor
MOSFET P-CH 30V 2A TSMT3

Related Product By Brand

3N246
3N246
Fairchild Semiconductor
BRIDGE RECTIFIER DIODE
FYP2004DNTU
FYP2004DNTU
Fairchild Semiconductor
RECTIFIER DIODE
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
FJC1963RTF
FJC1963RTF
Fairchild Semiconductor
TRANS NPN 30V 3A SOT89-3
KSE700STU
KSE700STU
Fairchild Semiconductor
TRANS PNP DARL 60V 4A TO126-3
HUFA76413DK8
HUFA76413DK8
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
HUF75345S3ST_NL
HUF75345S3ST_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
74LVX32SJX
74LVX32SJX
Fairchild Semiconductor
IC GATE OR 4CH 2-INP 14SOP
74ACT00PC
74ACT00PC
Fairchild Semiconductor
IC GATE NAND 4CH 2-INP 14DIP
MM74HC251M
MM74HC251M
Fairchild Semiconductor
IC MULTIPLEXER 1 X 8:1 16SOIC
FAN54015UCX
FAN54015UCX
Fairchild Semiconductor
IC BAT CHG 1.908A 3300KHZ PBGA20
FAN4040AIS325X
FAN4040AIS325X
Fairchild Semiconductor
VOLTAGE REFERENCE