FQB6N25TM
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Fairchild Semiconductor FQB6N25TM

Manufacturer No:
FQB6N25TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB6N25TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 5.5A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB6N25TM FQB8N25TM   FQB9N25TM   FQB16N25TM   FQB3N25TM   FQB4N25TM   FQB6N15TM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V 250 V 250 V 250 V 150 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 8A (Tc) 9.4A (Tc) 16A (Tc) 2.8A (Tc) 3.6A (Tc) 6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.75A, 10V 550mOhm @ 4A, 10V 420mOhm @ 4.7A, 10V 230mOhm @ 8A, 10V 2.2Ohm @ 1.4A, 10V 1.75Ohm @ 1.8A, 10V 600mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 15 nC @ 10 V 20 nC @ 10 V 35 nC @ 10 V 5.2 nC @ 10 V 5.6 nC @ 10 V 8.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V 530 pF @ 25 V 700 pF @ 25 V 1200 pF @ 25 V 170 pF @ 25 V 200 pF @ 25 V 270 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 87W (Tc) 3.13W (Ta), 90W (Tc) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 52W (Tc) 3.75W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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