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| Part Number | FQB55N06TM | FQB65N06TM | FQB85N06TM | FQB50N06TM |
|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Product Status | Obsolete | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | 65A (Tc) | 85A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 27.5A, 10V | 16mOhm @ 32.5A, 10V | 10mOhm @ 42.5A, 10V | 22mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | 65 nC @ 10 V | 112 nC @ 10 V | 41 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V | 2410 pF @ 25 V | 4120 pF @ 25 V | 1540 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3.75W (Ta), 133W (Tc) | 3.75W (Ta), 150W (Tc) | 3.75W (Ta), 160W (Tc) | 3.75W (Ta), 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
