FQB4N20TM
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Fairchild Semiconductor FQB4N20TM

Manufacturer No:
FQB4N20TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB4N20TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 3.6A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB4N20TM FQB4N80TM   FQB4N25TM   FQB5N20TM   FQB7N20TM   FQB4N50TM   FQB4N90TM   FQB34N20TM   FQB4N20LTM  
Manufacturer Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 800 V 250 V 200 V 200 V 500 V 900 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 3.9A (Tc) 3.6A (Tc) 4.5A (Tc) 6.6A (Tc) 3.4A (Tc) 4.2A (Tc) 31A (Tc) 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V 3.6Ohm @ 1.95A, 10V 1.75Ohm @ 1.8A, 10V 1.2Ohm @ 2.25A, 10V 690mOhm @ 3.3A, 10V 2.7Ohm @ 1.7A, 10V 3.3Ohm @ 2.1A, 10V 75mOhm @ 15.5A, 10V 1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V 25 nC @ 10 V 5.6 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 13 nC @ 10 V 30 nC @ 10 V 78 nC @ 10 V 5.2 nC @ 5 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 880 pF @ 25 V 200 pF @ 25 V 270 pF @ 25 V 400 pF @ 25 V 460 pF @ 25 V 1100 pF @ 25 V 3100 pF @ 25 V 310 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 52W (Tc) 3.13W (Ta), 52W (Tc) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 180W (Tc) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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