FQB3N30TM
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Fairchild Semiconductor FQB3N30TM

Manufacturer No:
FQB3N30TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB3N30TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 3.2A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB3N30TM FQB3N40TM   FQB7N30TM   FQB5N30TM   FQB3N80TM   FQB3N90TM   FQB2N30TM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 400 V 300 V 300 V 800 V 900 V 300 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 2.5A (Tc) 7A (Tc) 5.4A (Tc) 3A (Tc) 3.6A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.6A, 10V 3.4Ohm @ 1.25A, 10V 700mOhm @ 3.5A, 10V 900mOhm @ 2.7A, 10V 5Ohm @ 1.5A, 10V 4.25Ohm @ 1.8A, 10V 3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 7.5 nC @ 10 V 17 nC @ 10 V 13 nC @ 10 V 19 nC @ 10 V 26 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V 230 pF @ 25 V 610 pF @ 25 V 430 pF @ 25 V 690 pF @ 25 V 910 pF @ 25 V 130 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 70W (Tc) - 3.13W (Ta), 130W (Tc) 3.13W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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