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| Part Number | FQB34N20TM | FQB4N20TM | FQB34N20LTM |
|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Product Status | Active | Obsolete | Last Time Buy |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) | 3.6A (Tc) | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15.5A, 10V | 1.4Ohm @ 1.8A, 10V | 75mOhm @ 15.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 6.5 nC @ 10 V | 72 nC @ 5 V |
| Vgs (Max) | ±30V | ±30V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V | 220 pF @ 25 V | 3900 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 180W (Tc) | 3.13W (Ta), 45W (Tc) | 3.13W (Ta), 180W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
