FQB2N50TM
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Fairchild Semiconductor FQB2N50TM

Manufacturer No:
FQB2N50TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB2N50TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 2.1A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB2N50TM FQB6N50TM   FQB4N50TM   FQB5N50TM   FQB2N90TM   FQB2N60TM   FQB2N80TM   FQB2N30TM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 900 V 600 V 800 V 300 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 5.5A (Tc) 3.4A (Tc) 4.5A (Tc) 2.2A (Tc) 2.4A (Tc) 2.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5.3Ohm @ 1.05A, 10V 1.3Ohm @ 2.8A, 10V 2.7Ohm @ 1.7A, 10V 1.8Ohm @ 2.25A, 10V 7.2Ohm @ 1.1A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 900mA, 10V 3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V 22 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 15 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V 790 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 500 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V 130 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 64W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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