FQB11P06TM
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Fairchild Semiconductor FQB11P06TM

Manufacturer No:
FQB11P06TM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FQB11P06TM Datasheet
ECAD Model:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 53W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$0.66
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Similar Products

Part Number FQB11P06TM FQB17P06TM  
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V 120mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 53W (Tc) 3.75W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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