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| Part Number | FQB10N20LTM | FQB19N20LTM | FQB10N20TM | FQB10N20CTM |
|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Active | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | 21A (Tc) | 10A (Tc) | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V | 140mOhm @ 10.5A, 10V | 360mOhm @ 5A, 10V | 360mOhm @ 4.75A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V | 35 nC @ 5 V | 18 nC @ 10 V | 26 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V | 2200 pF @ 25 V | 670 pF @ 25 V | 510 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 87W (Tc) | 3.13W (Ta), 140W (Tc) | - | 72W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
