FQA10N80
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Fairchild Semiconductor FQA10N80

Manufacturer No:
FQA10N80
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
FQA10N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 9.8A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FQA10N80 FQA10N80C   FQA13N80  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) 10A (Tc) 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 4.9A, 10V 1.1Ohm @ 5A, 10V 750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 58 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V 2800 pF @ 25 V 3500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 240W (Tc) 240W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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