Fairchild Semiconductor-FDZ3N513ZT - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.1A
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1 nC @ 4.5 V
Vgs (Max):	+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds:	85 pF @ 15 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-WLCSP (1x1)
Package / Case:	4-XFBGA, WLCSP

Fairchild Semiconductor FDZ3N513ZT