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| Part Number | FDFS2P102 | FDFS2P103 | FDFS2P102A |
|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 30 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) | 5.3A (Ta) | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3.3A, 10V | 59mOhm @ 5.3A, 10V | 125mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 8 nC @ 5 V | 3 nC @ 5 V |
| Vgs (Max) | ±20V | ±25V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V | 528 pF @ 15 V | 182 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) | 900mW (Ta) | 900mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
