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| Part Number | FDFMA2P859T | FDFMA2P853T |
|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V | 120mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA | 1.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V | 6 nC @ 4.5 V |
| Vgs (Max) | ±8V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 10 V | 435 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Ta) | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | MicroFET 2x2 Thin | 6-MicroFET (2x2) |
| Package / Case | 6-UDFN Exposed Pad | 6-VDFN Exposed Pad |
