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| Part Number | FDB8880 | FDB8860 | FDB8870 |
|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Product Status | Active | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 54A (Tc) | 80A (Tc) | 23A (Ta), 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 40A, 10V | 2.3mOhm @ 80A, 10V | 3.9mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 214 nC @ 10 V | 132 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 15 V | 12585 pF @ 15 V | 5200 pF @ 15 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 55W (Tc) | 254W (Tc) | 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | TO-263AB | D²PAK (TO-263) | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
