Fairchild Semiconductor-FDB8444TS - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	338 nC @ 20 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8410 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	181W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-5
Package / Case:	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

Fairchild Semiconductor FDB8444TS