Fairchild Semiconductor-FDB6021P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	28A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	30mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	28 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	1890 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	37W (Tc)
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Fairchild Semiconductor FDB6021P