FDB2670
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Fairchild Semiconductor FDB2670

Manufacturer No:
FDB2670
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
FDB2670 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 19A TO263AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):93W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FDB2670 FDB2570  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 150 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta) 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 10A, 10V 80mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 100 V 1911 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 93W (Tc) 93W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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