EGP30F
  • Share:

Fairchild Semiconductor EGP30F

Manufacturer No:
EGP30F
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
EGP30F Datasheet
ECAD Model:
-
Description:
RECTIFIER DIODE, 3A, 300V, DO-20
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 300 V
Capacitance @ Vr, F:75pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.27
1,948

Please send RFQ , we will respond immediately.

Similar Products

Part Number EGP30F EGP30K   EGP30G   EGP30J   EGP10F   EGP20F   EGP30A   EGP30B   EGP30C   EGP30D  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard - Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 300 V 800 V 400 V - 300 V 300 V 50 V 100 V 150 V 200 V
Current - Average Rectified (Io) 3A 3A 3A - 1A 2A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 1.7 V @ 3 A 1.25 V @ 3 A - 1.25 V @ 1 A 1.25 V @ 2 A 950 mV @ 3 A 950 mV @ 3 A 950 mV @ 3 A 950 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns - 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 300 V 5 µA @ 800 V 5 µA @ 400 V - 5 µA @ 300 V 5 µA @ 300 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 150 V 5 µA @ 200 V
Capacitance @ Vr, F 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz 75pF @ 4V, 1MHz - - 45pF @ 4V, 1MHz 95pF @ 4V, 1MHz 95pF @ 4V, 1MHz 95pF @ 4V, 1MHz 95pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial - DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD - DO-41 DO-15 DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C - -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

GP3D050A120B
GP3D050A120B
SemiQ
SIC SCHOTTKY DIODE 1200V TO247-2
VS-6EWH06FNTR-M3
VS-6EWH06FNTR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A DPAK
GS1BWG_R1_00001
GS1BWG_R1_00001
Panjit International Inc.
SURFACE MOUNT GENERAL PURPOSE RE
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
SS23S-M3/61T
SS23S-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 2A 30V DO-214AC
RS1PJHM3_A/H
RS1PJHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE 100V 1A DO-220AA
SE10PDHM3/84A
SE10PDHM3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO220AA
G5S12008D
G5S12008D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
S1PMHE3/84A
S1PMHE3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO220AA
UG8ATHE3/45
UG8ATHE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 8A TO220AC
SS320 R7G
SS320 R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
MBR7150HC0G
MBR7150HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 7.5A TO220AC

Related Product By Brand

MPSA14
MPSA14
Fairchild Semiconductor
TRANS NPN DARL 30V 0.5A TO92
MJD340
MJD340
Fairchild Semiconductor
TRANS NPN 300V 0.5A DPAK
IRFU310BTU
IRFU310BTU
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FQAF40N25
FQAF40N25
Fairchild Semiconductor
MOSFET N-CH 250V 24A TO3PF
FQU3N50CTU
FQU3N50CTU
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
HGTG20N60B3-FS
HGTG20N60B3-FS
Fairchild Semiconductor
IGBT, 40A, 600V, N-CHANNEL, TO-2
74LVT16240MEA
74LVT16240MEA
Fairchild Semiconductor
IC BUFFER INVERT 3.6V 48SSOP
MM74HC125MTC
MM74HC125MTC
Fairchild Semiconductor
IC BUFFER NON-INVERT 6V 14TSSOP
74AC32PC
74AC32PC
Fairchild Semiconductor
IC GATE OR 4CH 2-INP 14DIP
74VCX86MTCX
74VCX86MTCX
Fairchild Semiconductor
IC GATE XOR 4CH 2-INP 14TSSOP
FM27C512Q120
FM27C512Q120
Fairchild Semiconductor
IC EPROM 512KBIT PARALLEL 28CDIP
MOC8103S
MOC8103S
Fairchild Semiconductor
TRANSISTOR OUTPUT OPTOCOUPLER