National Semiconductor-DS2003TM - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	7 NPN Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	55V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Power - Max:	926mW
Frequency - Transition:	-
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	16-SOP

National Semiconductor DS2003TM