Fairchild Semiconductor-BC337TF - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC337TF	BC337TFR	BC338TF	BC327TF
Manufacturer	Fairchild Semiconductor	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	PNP
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	25 V	45 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Fairchild Semiconductor BC337TF

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3