Fairchild Semiconductor-BC337A - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BC337A	BC337G	BC327A	BC337
Manufacturer	Fairchild Semiconductor	onsemi	Fairchild Semiconductor	NTE Electronics, Inc
Product Status	Obsolete	Obsolete	Obsolete	Active
Transistor Type	NPN	NPN	PNP	NPN
Current - Collector (Ic) (Max)	800 mA	800 mA	800 mA	800 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	100MHz	210MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 Long Body	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92 (TO-226)	TO-92-3	TO-92

Fairchild Semiconductor BC337A

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3