Fairchild Semiconductor-2N6076 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6076	2N6078	2N6276	2N6036
Manufacturer	Fairchild Semiconductor	Harris Corporation	Microchip Technology	NTE Electronics, Inc
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	NPN	-	PNP - Darlington
Current - Collector (Ic) (Max)	500 mA	7 A	-	4 A
Voltage - Collector Emitter Breakdown (Max)	25 V	250 V	-	80 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA	3V @ 1A, 5A	-	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	100nA	50µA	-	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V	12 @ 1.2A, 10V	-	750 @ 2A, 3V
Power - Max	625 mW	45 W	-	40 W
Frequency - Transition	-	-	-	-
Operating Temperature	150°C (TJ)	200°C (TJ)	-	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	-	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-213AA, TO-66-2	-	TO-225AA, TO-126-3
Supplier Device Package	TO-92-3	TO-66	-	TO-126

Transistor Type:	PNP
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	625 mW
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

Fairchild Semiconductor 2N6076