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Part Number | 2N5308 | 2N5338 | 2N5301 | 2N5302 | 2N5303 | 2N5306 | 2N5307 |
---|---|---|---|---|---|---|---|
Manufacturer | Fairchild Semiconductor | Solid State Inc. | NTE Electronics, Inc | Microchip Technology | NTE Electronics, Inc | onsemi | Fairchild Semiconductor |
Product Status | Obsolete | Active | Active | Active | Active | Obsolete | Obsolete |
Transistor Type | NPN - Darlington | NPN | NPN | - | NPN | NPN - Darlington | NPN - Darlington |
Current - Collector (Ic) (Max) | 1.2 A | 5 A | 30 A | - | 20 A | 1.2 A | 1.2 A |
Voltage - Collector Emitter Breakdown (Max) | 40 V | 100 V | 40 V | - | 80 V | 25 V | 40 V |
Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA | 1.2V @ 500mA, 5A | 3V @ 6A, 30A | - | 2V @ 4A, 20A | 1.4V @ 200µA, 200mA | 1.4V @ 200µA, 200mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) | 10µA (ICBO) | 5mA | - | 5mA | 100nA (ICBO) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA, 5V | 30 @ 2A, 2V | 15 @ 10A, 2V | - | 15 @ 15A, 2V | 7000 @ 2mA, 5V | 2000 @ 2mA, 5V |
Power - Max | 625 mW | 6 W | 200 W | - | 200 W | 625 mW | 625 mW |
Frequency - Transition | - | 30MHz | 2MHz | - | 2MHz | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | - | -65°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | - | Through Hole | Through Hole | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-205AA, TO-5-3 Metal Can | TO-204AA, TO-3 | - | TO-204AA, TO-3 | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 | TO-5 | TO-3 | - | TO-3 | TO-92-3 | TO-92-3 |