National Semiconductor-2N3725 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3725	2N3735	2N3725L	2N3765	2N3715	2N3720	2N3724
Manufacturer	National Semiconductor	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	-	-	NPN	PNP	-
Current - Collector (Ic) (Max)	1 A	1.5 A	-	-	1 mA	10 µA	-
Voltage - Collector Emitter Breakdown (Max)	50 V	40 V	-	-	60 V	60 V	-
Vce Saturation (Max) @ Ib, Ic	950mV @ 100mA, 1A	900mV @ 100mA, 1A	-	-	2.5V @ 2A, 10A	1.5V @ 300mA, 3A	-
Current - Collector Cutoff (Max)	10µA	10µA (ICBO)	-	-	1mA	10µA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100mA, 1V	20 @ 1A, 1.5V	-	-	50 @ 1A, 2V	25 @ 1A, 1.5V	-
Power - Max	800 mW	1 W	-	-	5 W	6 W	-
Frequency - Transition	-	-	-	-	-	60MHz	-
Operating Temperature	-	-65°C ~ 200°C (TJ)	-	-	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-
Mounting Type	Through Hole	Through Hole	-	-	Through Hole	Through Hole	-
Package / Case	TO-205AA, TO-5-3 Metal Can	TO-205AD, TO-39-3 Metal Can	-	-	TO-204AA, TO-3	TO-205AA, TO-5-3 Metal Can	-
Supplier Device Package	TO-5	TO-39 (TO-205AD)	-	-	TO-3	TO-5	-

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	950mV @ 100mA, 1A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 100mA, 1V
Power - Max:	800 mW
Frequency - Transition:	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

National Semiconductor 2N3725