MTM761100LBF
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Panasonic Electronic Components MTM761100LBF

Manufacturer No:
MTM761100LBF
Manufacturer:
Panasonic Electronic Components
Package:
Tape & Reel (TR)
Datasheet:
MTM761100LBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 4A WSMINI6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4V
Rds On (Max) @ Id, Vgs:42mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:WSMini6-F1-B
Package / Case:6-SMD, Flat Leads
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In Stock

$0.47
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Similar Products

Part Number MTM761100LBF MTM761110LBF  
Manufacturer Panasonic Electronic Components Panasonic Electronic Components
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 1A, 4V 34mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V 1400 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package WSMini6-F1-B WSMini6-F1-B
Package / Case 6-SMD, Flat Leads 6-SMD, Flat Leads

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