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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
DME914C10R
DME914C10R Image
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Panasonic Electronic Components DME914C10R
Manufacturer No:
DME914C10R
Manufacturer:
Panasonic Electronic Components
Package:
Tape & Reel (TR)
Datasheet:
DME914C10R Datasheet
ECAD Model:
-
Description:
TRANS NPN PREBIAS/PNP SSMINI6
Delivery:
Payment:
Product Attributes
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):
100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
50V, 12V
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
300MHz
Power - Max:
125mW
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SSMini6-F3-B
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UnitPrice:
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Quantity:
447
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